ESA GNC Conference Papers Repository

The paper shall address the results and conclusions of the qualification testing of the HAS APS1 sensor developed by Cypress Semiconductor Belgium (formerly Fillfactory) under ESA contract [19384/06/NL/JA], showing how the testing was improved using lessons learnt from the STAR1000 evaluation campaign [17235/03/NL/FM]. The key features of the device that make it interesting for use in AOCS applications were stressed. The HAS APS sensor was developed as a new high end image sensor targeted mainly at STR2 applications. Compared to the STAR1000 the sensitivity is increased and the noise level is decreased, while retaining the excellent radiation tolerance demonstrated by the previous APS generation. The HAS APS is a 1024x1024 CMOS3 image sensor with 18um pixels. It supports multiple windowing, with each window having its own offset, gain and integration time. The sensor features also non-destructive readout mode of operation to enable correlated double sampling (CDS). The HAS APS is processed in a 0.35 standard CMOS technology. Radiation hardness is reached through specific design techniques. It is assembled in a N2 environment using an 84-pin JLCC package and a BK7G18 glass lid. A test system was developed by Cypress to perform pre and post stress testing. The stresses were outsourced to different test houses in Europe. Total dose testing and constructional analysis were performed at the ESTEC laboratories. The evaluation test program was performed according to ESCC2269000. <br>This evaluation consisted of:<br> • Thermal testing (shock, cycling, step stress test)<br> • Mechanical testing (shock, vibration, acceleration)<br> • Environmental testing (ESD, humidity, solvents, …)<br> • Radiation testing (total dose, proton, SEU)<br> • Package and assembly testing (inspections, DPA, bond pull, RGA, epoxy tests…)<br> The main conclusions of the evaluation are:<br> • The HAS survived all mechanical stresses<br> • The HAS survived 2000h life test without degradation<br> • Average dark signal rise under radiation: 165,78 e-/s per KRad @ 25DegC<br> • Average DSNU rise under radiation: 20,19 e-/s per KRad @ 25DegC<br> • No Spectral response degradation after TID and 2000h life test was noted<br> • The HAS is latch-up free under heavy ion bombing up to 79.1 MeV/cm².mg <br> Specific issues and lessons learned will be discussed.